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PD - 95289
IRF7493PBF
HEXFET(R) Power MOSFET
Applications High frequency DC-DC converters l Lead-Free
l
VDSS
80V
RDS(on) max
15m:@VGS=10V
Qg (typ.)
35nC
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8 7
A A D D D D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
80 20 9.3 7.4 74 2.5 1.6 0.02 -55 to + 150
Units
V
c
A W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
f f
W/C C
Thermal Resistance
Parameter
RJC RJA Junction-to-Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
f
Notes through are on page 9
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1
09/21/04
IRF7493PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
80 --- --- 2.0 --- --- --- --- --- 0.074 11.5 --- --- --- --- --- --- --- 15 4.0 20 250 200 -200 nA V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 5.6A
e
V A
VDS = VGS, ID = 250A VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Crss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 35 5.7 12 8.3 7.5 30 12 1510 320 130 1130 210 320 --- 53 --- --- --- --- --- --- --- --- --- --- --- --- pF ns S VDS = 15V, ID = 5.6A ID = 5.6A VDS = 40V VGS = 10V VDD = 40V, ID = 5.6A RG = 6.2 VGS = 10V VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 64V, = 1.0MHz VGS = 0V, VDS = 0V to 64V
e
g
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ. --- --- Max. 180 5.6 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 37 52 9.3 A 74 1.3 56 78 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 5.6A, VGS = 0V TJ = 25C, IF = 5.6A, VDD = 15V di/dt = 100A/s
e
e
2
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IRF7493PBF
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 5.5V 5.0V 4.5V 4.0V BOTTOM 3.5V
TOP
100
10
VGS 15V 10V 8.0V 5.5V 5.0V 4.5V 4.0V BOTTOM 3.5V
TOP
1
3.5V
3.5V
0.1
1
0.01 0.1 1
20s PULSE WIDTH Tj = 25C
0.1
20s PULSE WIDTH Tj = 150C
0.1 1 10 100
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
2.0
T J = 150C
10.00
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
ID = 9.3A VGS = 10V
1.5
T J = 25C
1.00
1.0
0.10 3.0 4.0
VDS = 25V 20s PULSE WIDTH
5.0 6.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7493PBF
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds C rss 10000 = C gd C oss = C ds + C gd
20
VGS, Gate-to-Source Voltage (V)
SHORTED
ID= 5.6A 16 VDS= 64V VDS= 40V VDS= 16V
C, Capacitance (pF)
12
Ciss
1000
Coss Crss
100
8
4
10 1 10 100
0 0 10 20 30 40 50 60 QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.0
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
T J = 150C 10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10 100sec
1.0 T J = 25C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Voltage (V)
1 Tc = 25C Tj = 150C Single Pulse 0 1 10
1msec 10msec
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7493PBF
10
VDS
8
ID , Drain Current (A)
RD
VGS RG
D.U.T.
+
6
-V DD
10V
4
Pulse Width 1 s Duty Factor 0.1 %
2
Fig 10a. Switching Time Test Circuit
VDS
0 25 50 75 100 125 150 T C , Case Temperature (C)
90%
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
Thermal Response ( Z thJC )
10
0.20 0.10 0.05
1
0.02 0.01
0.1
SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7493PBF
RDS (on) , Drain-to-Source On Resistance ()
RDS(on) , Drain-to -Source On Resistance ()
0.013
0.030
0.012 VGS = 10V
0.020
ID = 5.6A
0.011 0 20 40 60 80 ID , Drain Current (A)
0.010 4.0 8.0 12.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VGS
3mA
EAS, Single Pulse Avalanche Energy (mJ)
VG
500
Charge
TOP
IG
ID
400
BOTTOM
ID 2.5A 4.5A 5.6A
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
300
200
15V
100
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0
A
25
50
75
100
125
150
I AS
tp
0.01
Starting T J, Junction Temperature (C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7493PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Waveform
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IRF7493PBF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHE S MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
8 6 E 1
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45
8X L 7
8X c
NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050]
F OOTPRINT 8X 0.72 [.028]
6.46 [.255]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F7101
8
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IRF7493PBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 12mH
RG = 25, IAS = 5.6A.
Pulse width 300s; duty cycle 2%.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
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